1673-159X

CN 51-1686/N

胡龙虎, 丁士华, 宋天秀, 肖鹏, 张瑶, 刘杨琼. MgO对K2O-Al2O3-SiO2系陶瓷微波介电性能的影响[J]. 西华大学学报(自然科学版), 2016, 35(1): 35-39. DOI: 10.3969/j.issn.1673-159X.2016.01.007
引用本文: 胡龙虎, 丁士华, 宋天秀, 肖鹏, 张瑶, 刘杨琼. MgO对K2O-Al2O3-SiO2系陶瓷微波介电性能的影响[J]. 西华大学学报(自然科学版), 2016, 35(1): 35-39. DOI: 10.3969/j.issn.1673-159X.2016.01.007
HU Longhu, DING Shihua, SONG Tianxiu, XIAO Peng, ZHANG Yao, LIU Yangqiong. Effect of MgO on Microwave Dielectric Properties of K2O-Al2O3-SiO2 Ceramics[J]. Journal of Xihua University(Natural Science Edition), 2016, 35(1): 35-39. DOI: 10.3969/j.issn.1673-159X.2016.01.007
Citation: HU Longhu, DING Shihua, SONG Tianxiu, XIAO Peng, ZHANG Yao, LIU Yangqiong. Effect of MgO on Microwave Dielectric Properties of K2O-Al2O3-SiO2 Ceramics[J]. Journal of Xihua University(Natural Science Edition), 2016, 35(1): 35-39. DOI: 10.3969/j.issn.1673-159X.2016.01.007

MgO对K2O-Al2O3-SiO2系陶瓷微波介电性能的影响

Effect of MgO on Microwave Dielectric Properties of K2O-Al2O3-SiO2 Ceramics

  • 摘要: 采用传统固相反应法制备添加不同质量分数(0~4%)MgO的K2O-Al2O3-SiO2体系低介电微波陶瓷,利用SEM、XRD、Agilent4284等测试手段,讨论加入MgO对K2O-Al2O3-SiO2系的相结构、显微组织、烧结温度及介电性能的影响。结果表明:添加MgO能有效降低K2O-Al2O3-SiO2体系的烧结温度,且室温下介电常数低,介电损耗小;1 MHZ下,添加质量分数2%MgO的样品在1 150 ℃烧结后介电常数最小,为4.271, 在1 250 ℃烧结后介电损耗最小,为0.004 9。

     

    Abstract: we prepared low dielectric constant microwave dielectric ceramics(system of K2O-Al2O3-SiO2)doped MgO in the way of solid state reaction, discussed the effect of MgO on the system of K2O-Al2O3-SiO2 about phase structure、micro-structure、Sintering temperature and Dielectric properties by SEM, XRD and Agilent4284.The result show that MgO could lower sintering temperature, and the samples are low dielectric constant and low dielectric loss at room temperature. At the frequency of 1 MHz, the sample doped with 2(wt)%MgO has the lowest dielectric constant sintered at 1 150 ℃, and the lowest dielectric loss sintered at 1 250 ℃.

     

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