Numerical Simulation of Temperature Field of Single-crystal Silicon Irradiated by Gauss Long Pulse Laser

The two-dimensional axial symmetric model was established to numerically analyze the process of heating of the gauss long-pulse laser with the single-crystal silicon(SCS).With the different laser power density and irradiating time, the gauss long-pulse laser interactions with the SCS in the temperature distribution and evolvement were analyzed. The melting damage threshold and heat deposited depth of single-crystal silicon were estimated. The results show that the melting damage threshold of single-crystal silicon is about 0.22MW/cm² and the heat deposited of long laser pulse in the SCS surface is around one millimeter. The temperature of single-crystal silicon will be enlarged as laser power density and irradiating time increasing, while the temperature of SCS will decrease along with stretching of speckle radius direction and increase of targets thickness. The temperature of center surface of SCS will rise rapidly during the action of laser, which is mainly decided by the gauss laser energy distribution, and after the action of laser, the heat of irradiating zone flows from the high temperature area to the low temperature area by the effect of heat conduction, with the result that The temperature of center surface of SCS will decrease slowly as time increasing and eventually tend to room temperature.